rev.2.00, mar.05.2 004, page 1 of 8 HAF2021(l), HAF2021(s) silicon n channel mos fet series power switching rej03g0179-0200z (previous ade-208-1459a(z)) rev.2.00 mar.05.2004 description this fet has the over temperature shut?down capability sensin g to the junction temperature. this fet has the built?in over temperature shut?down circuit in the gate area. and this circuit operation to shut?down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. features ? logic level operation (6 v gate drive) ? high endurance capability against to the short circuit ? built?in the over temperature shut?down circuit ? latch type shut?down operation (need 0 voltage recovery) outline ldpak 1. gate 2. drain 3. source 4. drain 1 2 3 4 1 2 3 4 gate resistor temperature sensing circuit latch circuit gate shut-down circuit d s g
HAF2021(l), HAF2021(s) rev.2.00, mar.05.2 004, page 2 of 8 absolute maximum ratings (ta = 25 c) item symbol ratings unit drain to source voltage v dss 60 v gate to source voltage v gss 16 v gate to source voltage v gss ?2.5 v drain current i d 50 a drain peak current i d(pulse) note1 100 a body-drain diode reverse drain current i dr 50 a channel dissipation pch note2 100 w channel temperature tch 150 c storage temperature tstg ?55 to +150 c notes: 1. pw 10 s, duty cycle 1 % 2. value at ta = 25c typical operation characteristics item symbol min typ max unit test conditions input voltage v ih 3.5 ? ? v v il ??1.2v input current i ih1 ? ? 100 avi = 6 v, v ds = 0 (gate non shut down) i ih2 ??50 a vi = 3.5 v, v ds = 0 i il ??1 a vi = 1.2 v, v ds = 0 input current i ih(sd)1 ?0.6?mavi = 6 v, v ds = 0 (gate shut down) i ih(sd)2 ? 0.35 ? ma vi = 3.5 v, v ds = 0 shut down temperature t sd ? 175 ? c channel temperature gate operation voltage v op 3.5 ? 12 v
HAF2021(l), HAF2021(s) rev.2.00, mar.05.2 004, page 3 of 8 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain current i d1 90??a v gs = 6 v, v ds = 10 v drain current i d2 ??10mav gs = 1.2 v, v ds = 10 v drain to source breakdown voltage v (br)dss 60??v i d = 10 ma, v gs = 0 gate to source breakdown voltage v (br)gss 16??v i g = 300 a, v ds = 0 gate to source breakdown voltage v (br)gss ?2.5 ? ? v i g = ?100 a, v ds = 0 gate to source leak current i gss1 ? ? 100 av gs = 6 v, v ds = 0 i gss2 ??50 av gs = 3.5 v, v ds = 0 i gss3 ??1 av gs = 1.2 v, v ds = 0 i gss4 ? ? ?100 av gs = ?2.4 v, v ds = 0 input current (shut down) i gs(op)1 ?0.6?mav gs = 6 v, v ds = 0 i gs(op)2 ?0.35?mav gs = 3.5 v, v ds = 0 zero gate voltage drain current i dss ??10 av ds = 60 v, v gs = 0 gate to source cutoff voltage v gs(off) 2.2 ? 3.4 v i d = 1 ma, v ds = 10 v forward transfer admittance |y fs | 1550? s i d = 25 a, v ds = 10 v note3 static drain to source on state resistance r ds(on) ?8 12m ? i d = 25 a, v gs = 10 v note3 static drain to source on state resistance r ds(on) ?9.515m ? i d = 25 a, v gs = 6 v note3 output capacitance coss ? 1450 ? pf v ds = 10 v , v gs = 0, f = 1 mhz turn-on delay time t d(on) ?20?si d = 25 a, v gs = 10 v rise time t r ?75?sr l = 1.2 ? turn-off delay time t d(off) ?3 ?s fall time t f ?2.6?s body?drain diode forward voltage v df ?0.9?v i f = 50 a, v gs = 0 body?drain diode reverse recovery time t rr ? 110 ? ns i f = 50 a, v gs = 0 dif/ dt =50 a/s over load shut down operation time note4 t os ?0.8?msv gs = 6 v, v dd = 16 v notes: 3. pulse test 4. including the junction temperature ri se of the over loaded condition.
HAF2021(l), HAF2021(s) rev.2.00, mar.05.2 004, page 4 of 8 main characteristics 500 100 200 20 50 10 2 5 1 0.5 0.3 0.5 1 2 5 10 20 50 100 100 s 1 ms pw = 10 ms dc opera tion (tc = 25 c ) ta = 25 c operation in this area is limited by r ds(on) thermal shut down operation area drain to source voltage v ds (v) drain current i d (a) maximum safe operation area 100 80 60 40 20 0 246810 10 v 8 v v gs = 3.5 v 6 v 4 v drain to source voltage v ds (v) drain current i d (a) typical output characteristics pulse test 50 40 30 20 10 02468 gate to source voltage v gs (v) drain current i d (a) typical transfer characteristics v ds = 10 v pulse test 200 150 100 50 0 50 100 150 200 channel dissipation pch (w) case temperature tc ( c) power vs. temperature derating tc = -25 c 25 c 75 c 0.8 0.6 0.4 0.2 0246810 10 a 25 a i d = 50 a pulse test gate to source voltage v gs (v) drain to source saturation voltage vs. gate to source voltage drain to source saturation voltage v ds(on) (v) 50 1 2 5 10 20 50 100 200 20 10 2 5 1 v gs = 6 v pulse test drain current i d (a) drain to source on state resistance r ds(on) (m ? ) static drain to source state resistance vs. drain current v gs = 10 v
HAF2021(l), HAF2021(s) rev.2.00, mar.05.2 004, page 5 of 8 25 20 15 10 5 -25 0 25 50 75 100 125 150 0 pulse test case temperature tc ( c) drain to source on state resistance r ds(on) (m ? ) static drain to source state resistance vs. temperature drain current i d (a) forward transfer admittance vs. drain current forward transfer admittance |yfs| (s) v gs = 10 v v gs = 6 v i d = 50 a 25 a, 10 a i d = 50 a 25 a, 10 a 100 50 20 10 1 0.1 0.5 0.2 5 2 0.1 0.5 1 5 10 50 100 tc = -25 c 25 c 75 c v ds = 10 v pulse test 1 2 5 10 100 20 50 1000 200 500 100 20 10 50 di / dt = 50 a / s v gs = 0, ta = 25 c reverse drain current i dr (a) reverse recovery time trr (ns) body to drain diode reverse recovery time 0.5 1 5 10 100 50 500 t r 1000 500 50 100 10 5 200 20 2 1 v gs = 10 v, v dd = 30 v pw = 300 s, duty < 1 % t f t d(on) t d(off) drain current i d (a) switching time t ( s) switching characteristics 50 40 30 20 10 0 0.4 0.8 1.2 1.6 2.0 v gs = 5 v 0, -5 v source to drain voltage v sd (v) reverse drain current i dr (a) reverse drain current vs. source to drain voltage pulse test 10000 1000 100 10 01020304050 v = 0 f = 1 mhz gs coss capacitance c (pf) drain to source voltage v ds (v) typical capacitance vs. drain to source voltage
HAF2021(l), HAF2021(s) rev.2.00, mar.05.2 004, page 6 of 8 12 10 8 6 4 2 0 gate to source voltage v gs (v) gate to source voltage vs. shutdown time of load-short test 0.1 shutdown time of load-short test pw (s) 200 180 160 140 120 0 gate to source voltage v gs (v) shutdown case temperature tc ( c) 100 2 46810 i = 5 a d shutdown case temperature vs. gate to source voltage 0.0001 0.001 0.01 v = 16 v dd 3 1 0.3 0.1 0.03 0.01 10 100 1 m 10 m 100 m 1 10 dm p pw t d = pw t ch- c(t) = s (t) ? ch- c ch- c = 1.25 c/w, tc = 25 c tc = 25 c d = 1 0.5 0.2 0.1 0.02 0.01 1shot pulse pulse width pw (s) normalized transient thermal impedance s (t) normalized transient thermal impedance vs. pulse width vin monitor d.u.t. vin 10 v r l v = 30 v dd tr td(on) vin 90% 90% 10% 10% vout td(off) vout monitor 50 ? 90% 10% t f switching time test circuit waveform
HAF2021(l), HAF2021(s) rev.2.00, mar.05.2 004, page 7 of 8 package dimensions package code jedec jeita mass (reference value) ldpak (l) ? ? 1.40 g 10.2 0.3 0.86 0.76 0.1 2.54 0.5 2.54 0.5 + 0.2 ? 0.1 1.3 0.2 4.44 0.2 1.3 0.15 2.49 0.2 0.4 0.1 11.0 0.5 8.6 0.3 10.0 11.3 0.5 + 0.3 ? 0.5 (1.4) 1.37 0.2 as of january, 2003 unit: mm package code jedec jeita mass (reference value) ldpak (s)-(1) ? ? 1.30 g 10.2 0.3 1.37 0.2 (1.5) (1.4) 8.6 0.3 10.0 + 0.3 ? 0.5 4.44 0.2 1.3 0.15 0.1 + 0.2 ? 0.1 0.4 0.1 2.49 0.2 0.86 + 0.2 ? 0.1 2.54 0.5 2.54 0.5 1.3 0.2 3.0 + 0.3 ? 0.5 (1.5) 7.8 6.6 2.2 1.7 7.8 7.0 as of january, 2003 unit: mm
HAF2021(l), HAF2021(s) rev.2.00, mar.05.2 004, page 8 of 8 ordering information part name quantity shipping container HAF2021-90l max:50pcs/sack sack HAF2021-90s max:50pcs/sack sack HAF2021-90stl 1000pcs/reel embossed tape HAF2021-90str 1000pcs/reel embossed tape note: for some grades, production may be terminated. please contact the renesas sales office to check the state of production before ordering the product.
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